| 摘要 |
A method of etching away a selected portion of silicon oxide from a body of silicon oxide and tapering the edge of the remaining silicon oxide that delineates the selected portion comprises the steps of (a) delineating the selected portion with a coating of a photoresist on a surface of the body, and (b) etching away the selected portion with a composite solution that contains both an etchant for the silicon oxide and a component for lifting only the edge of the photoresist from the interface between the photoresist and the silicon oxide at the delineation of the selected portion. |
