| 摘要 |
<P>PROBLEM TO BE SOLVED: To properly embed a conductor film for embedded wiring in a semiconductor integrated circuit device having an embedded wiring structure, which does not require advanced technologies. <P>SOLUTION: In a semiconductor integrated circuit device, when wiring consisting of Al or an Al alloy is connected with the wiring consisting of Co or Co alloy, a barrier conductor film or a plug is interposed in the connection part. The wiring material of an uppermost wiring layer of wiring layers is formed of Al or an Al alloy, and the wiring in the lower layer is formed of Co or a Co alloy. Further, wiring of a lowermost layer is formed of a conductive material comprising tungsten which can be processed in fine structure, and has a low resistance and improved resistance to EM (electromigration). <P>COPYRIGHT: (C)2004,JPO&NCIPI |
