| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus which is different from the configuration of the existing semiconductor laser apparatus and can oscillate a light having a TE polarization component suitable for practicality (that is, large intensity of the TE polarization so that it is suitable for the practicality). SOLUTION: The semiconductor laser apparatus 100 includes a GaAsP activity layer 5, InGaP guide layers 4 and 6, and AlGaInP cladding layers 3 and 7. The GaAsP activity layer 5 is a layer which performs luminescence. The InGaP guide layers 4 and 6 pinch the GaAsP activity layer 5. The AlGaInP clad layers 3 and 7 pinch the InGaP guide layers 4 and 6 from both sides. Moreover, the polarization rate of the TM polarization is less than 2.3 as standing for the intensity of the TM polarization to the intensity of the TE polarization. COPYRIGHT: (C)2007,JPO&INPIT
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