发明名称 |
THIN FILM MEMORY DEVICE HAVING A VARIABLE RESISTANCE |
摘要 |
A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order. |
申请公布号 |
KR20060132693(A) |
申请公布日期 |
2006.12.21 |
申请号 |
KR20067016238 |
申请日期 |
2004.10.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OSANO KOICHI;MURAOKA SHUNSAKU;SAKAKIMA HIROSHI |
分类号 |
G11C11/14;G11C11/34;G11C16/02;H01L45/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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