SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER ARRAY, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE AND INFORMATION PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser with a long resonator structure which has improved luminous efficiency.SOLUTION: A surface emitting semiconductor laser 10 comprises on a substrate 100: an n-type lower DBR 102; a resonator extension region 104; a carrier block layer 105 including a first carrier block layer 105A and a second carrier block layer 105B; an active region 106; a current confinement layer 110; and an upper DBR 108. The first carrier block layer 105A has a band gap larger than that of the second carrier block layer 105B. The second carrier block layer 105B has a film thickness larger than that of the first carrier block layer 105A.SELECTED DRAWING: Figure 2