MULTI-BIT SINGLE CELL MEMORY HAVING TAPERED CONTACT

摘要

PURPOSE: A multi-bit single cell memory capable of electrically operated and directly over-writable having a tapered contact in which can help define the size and positions of a conduction path is disclosed. CONSTITUTION: The electrically operated, directly over-writable, multi-bit, single-cell chalcogenide memory element (36) with multi-bit storage capabilities and having at least one contact (6) for supplying electrical input signals to set the memory element to a selected resistance value and a second contact (8) tapering to a peak (16) adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.