METHOD FOR FORMING CAPACITOR

摘要

PURPOSE: A method is provided to simplify a process sequence for making a storage electrode and improve the step between the storage electrode and its surrounding. CONSTITUTION: The method comprises the step of; forming a first insulating layer(208) having a contact hole for exposing an impurity region(220) on a semiconductor substrate(200) on which a transistor having the impurity region is formed; forming a plug which is in contact with the impurity region by filling the contact hole; forming an etching stopper layer and a second insulating layer sequentially so as to expose the plug on the first insulating layer; forming a polysilicon pattern to be a storage electrode(206) of the capacitor so as to cover a side surface of the second insulating layer and a space; removing the second insulating layer so as to expose the etching stopper layer; forming a dielectric layer and a plate electrode on the storage electrode. Thereby, it is possible to form the storage electrode on one node contact by perform the expose and etching processing once so that it can simplify the process sequence and improve the step between the storage electrode and its surrounding.