III-NITRIDE SEMICONDUCTOR DEVICE WITH REDUCED ELECTRIC FIELD BETWEEN GATE AND DRAIN AND PROCESS FOR ITS MANUFACTURE

摘要

A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N' III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.