| 摘要 |
A nitride semiconductor device, the Doherty amplifier and the drain VCA are provided to form the barrier layer under the electronics driving layer and to prevent electrons among two dimensional electron gas from being released discharged in the substrate direction. The nitride semiconductor device comprises the substrate, the laminate semiconductor structure, and the gate electrode(50G), the source and drain electrode. The laminate semiconductor structure comprises the electron driving layer(46) and electron layer(48). Two dimensional electron gas is formed along the interface of the electron layer and electron driving layer. The electron driving layer is made of the undoped nitride semiconductor. The electron layer is made of the n-type nitride semiconductor. The barrier layer(45) containing the n-type conductive layer and Al is formed between the substrate and the electron driving layer by the consecutive epitaxial.
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