发明名称 Wet etching of zinc tin oxide thin films
摘要 A method of wet etching semiconductor zinc tin oxide includes submerging a semiconductor zinc tin oxide film in a bath solution. The film is partially covered with a pattern of protective material, and the bath solution etches semiconductor zinc tin oxide film not covered by the protective material. A system for wet etching semiconductor zinc tin oxide includes a bath containing a bath solution. The bath solution is effective to wet etch the semiconductor zinc tin oxide.
申请公布号 US2009075421(A1) 申请公布日期 2009.03.19
申请号 US20070901852 申请日期 2007.09.19
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 CHEN ZHIZHANG;WIEDEMANN ERIC;LIU QIN
分类号 H01L21/34;C23F1/00 主分类号 H01L21/34
代理机构 代理人
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