发明名称 |
Wet etching of zinc tin oxide thin films |
摘要 |
A method of wet etching semiconductor zinc tin oxide includes submerging a semiconductor zinc tin oxide film in a bath solution. The film is partially covered with a pattern of protective material, and the bath solution etches semiconductor zinc tin oxide film not covered by the protective material. A system for wet etching semiconductor zinc tin oxide includes a bath containing a bath solution. The bath solution is effective to wet etch the semiconductor zinc tin oxide.
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申请公布号 |
US2009075421(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20070901852 |
申请日期 |
2007.09.19 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
CHEN ZHIZHANG;WIEDEMANN ERIC;LIU QIN |
分类号 |
H01L21/34;C23F1/00 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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