METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for manufacturing a thin film transistor substrate is provided to etch a data metal layer formed with Mo/Al/Mo layers by using a dry etch process only for preventing the width of wiring from being expanded, thereby simplifying the manufacturing process. A gate wiring containing a gate line(122) and gate electrodes(124) is formed on a substrate. A gate insulating layer and an active layer are sequentially formed on the substrate. A data metal layer, sequentially deposited with first, second, and third metal layers, is formed on the active layer. The third metal layer is dry-etched by a first photoresist pattern. The second and first metal layers are simultaneously dry-etched by the first photoresist pattern and a data line is formed. The active layer is dry-etched by the first photoresist pattern. A second photoresist pattern is formed by etching the first photoresist pattern from which a channel forming region is removed. The channel forming region of the data metal layer is dry-etched by using the second photoresist pattern to form a source electrode(157) and a drain electrode(158). Thereby, the width of the wiring is not expanded and the manufacturing process is simple.