| 摘要 |
A method of manufacturing the semiconductor device is by forming the passivation layer in the side wall of opening after the deposition of the barrier metal layer and to prevent the wiring material from sticking out the substrate by the thermal process. The second inter metal dielectric(101) is formed in the surface of the first interlayer insulating film(102). The second inter metal dielectric and the first interlayer insulating film are etched and the opening which reaches to the surface of the semiconductor substrate is formed. The barrier metal layer(104) is formed in the inner wall of opening and the surface of the second inter metal dielectric. The passivation film(105) is stacked in the surface of the barrier metal layer. The anisotropic etching is performed on the passivation film to leave the insulating layer of the sidewall shape. The wiring material(106) is stacked on the insulating layer of the sidewall shape, and the surface of the second inter metal dielectric and the barrier metal layer.
|
