GROUP III NITRIDE SUBSTRATES AND THEIR FABRICATION METHOD

摘要

Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes are perpendicular to group III nitride's c-axis. More than 90% of stacking faults exist over metal stripes. Second side may expose a nonpolar or semipolar plane. Also disclosed is a group III nitride substrate having a first side of nonpolar or semipolar plane and a second side with exposed nonpolar or semipolar plane. The substrate contains bundles of stacking faults with spacing larger than 1 mm. The invention also provides methods of fabricating the group III nitride substrates above.

主权项

1. A crystalline group III nitride substrate comprising,
(a) a first side exposing nonpolar or semipolar plane of group III nitride; (b) a second side opposite to the first side exposing nonpolar or semipolar plane of group III nitride; (c) bundles of stacking faults perpendicular to c-axis with separation larger than 1 mm.