SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM

摘要

A CVD device including: a chamber containing a substrate having a SiC-film formation surface; a heating mechanism for heating the substrate from a direction opposite the film formation surface; a third supply space (231) for supplying a third raw-material gas containing carbon in a direction (X) toward the substrate from the lateral side of the substrate; a second supply space (221) for supplying a second raw-material gas containing silicon in the direction (X) from the lateral side of the substrate toward the side farther than the third raw-material gas when viewed from the film formation surface; and a blocking gas supply section for supplying a blocking gas for suppressing the upward movement of the third raw-material gas and the second raw-material gas in a second direction from the side facing the film formation surface toward the film formation surface.