Method of making a FinFET device

摘要

A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. The method includes forming a first gate stack and a second gate stack over different portions of a fin feature formed on a substrate, forming a first dielectric layer in a space between the first and second gat stacks, removing the first gate stack to form a first gate trench, therefore the first gate trench exposes a portion of the fin feature. The method also includes removing the exposed portion of the fin feature and forming an isolation feature in the first gate trench.

主权项

1. A method comprising:
forming a first gate stack and a second gate stack over different portions of a fin feature formed on a substrate; forming a first dielectric layer in a space between the first and second gate stacks; removing the first gate stack to form a first gate trench, wherein the first gate trench exposes a portion of the fin feature; removing the exposed portion of the fin feature to form a fin cut; forming an isolation feature in the first gate trench and the fin cut; and after forming the isolation feature, removing the second gate stack to form a second gate trench, wherein the second gate trench exposes another portion of the fin feature; and forming a high-k/metal (HK/MG) gate stack in the second gate trench, and wherein the second gate stack is removed by a selective etch, which does not etch the first dielectric layer and the isolation feature, wherein the second gate stack is removed without using a patterned hard mask.