| 摘要 |
PROBLEM TO BE SOLVED: To provide substrate processing equipment in which uniformity of temperature in the substrate plane and thereby uniformity of film thickness in the substrate plane can be enhanced by suppressing temperature variation in the substrate plane, and to provide a process for fabricating a semiconductor device. SOLUTION: The substrate processing equipment comprises a chamber for processing a substrate, a susceptor 217 for supporting a wafer 200 in the processing chamber, and a heater for heating the substrate wherein a plurality of protrusions 1, 1' and 1" are provided on the wafer 200 mounting surface of the susceptor and the surface area of a protrusion 2 provided at a central part is set larger than the surface area of other protrusions. A process for fabricating a semiconductor device using that equipment is also provided. COPYRIGHT: (C)2005,JPO&NCIPI |
