发明名称 HIGH TEMPERATURE BONDING PROCESSES INCORPORATING TRACES
摘要 A method for high temperature bonding of substrates may include providing first and second substrates and forming at least one trace onto one or more adjacent surfaces of the substrates. The trace may include at least a first configuration of a material having a high melting temperature. The material may include at least one or more chemical elements selected from a group consisting of nickel, silver, aluminum, and copper. The method may further include depositing tin on a top surface of the trace and bonding the substrates together to create a bond layer using a high temperature bonding process. The top surface of the trace may be disposable between the substrates. The trace may be incorporated into the bond layer that is dispersed between aligned and adjacent surfaces of the substrates. The first configuration may form one or more intermetallic bonds in the bond layer.
申请公布号 US2016339538(A1) 申请公布日期 2016.11.24
申请号 US201514714425 申请日期 2015.05.18
申请人 Toyota Motor Engineering & Manufacturing North America, Inc. 发明人 Joshi Shailesh N.;Noguchi Masao
分类号 B23K20/02;B23K1/00;B23K35/26;B23K35/02;B32B15/01;C22C13/00 主分类号 B23K20/02
代理机构 代理人
主权项 1. A method for high temperature bonding of substrates, the method comprising: providing a first substrate and a second substrate; forming at least one trace onto one or more adjacent surfaces of the first and second substrates, wherein the at least one trace comprises at least a first configuration of a material having a high melting temperature. wherein the material comprises at least one or more chemical elements selected from a group consisting of nickel, silver, aluminum, and copper; depositing at least a first amount of tin on a top surface of the at least one trace, wherein the top surface of the at least one trace is disposable between and facing at least one of the first substrate and the second substrate; and bonding the first and second substrates together to create a bond layer using a high temperature bonding process, wherein the at least one trace is incorporated into the bond layer that is dispersed between aligned and adjacent surfaces of the first and second substrates, and wherein the first configuration forms one or more intermetallic bonds in the bond layer.
地址 Erlanger KY US