SYSTEM FOR TREATMENT OF DEPOSITION REACTOR

摘要

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

主权项

1. A system for treating a reaction chamber, the system comprising:
a reactor comprising a reaction chamber; a metal halide source fluidly coupled to the reactor; a metal CVD source selected from the group consisting of one or more of organometallic compounds and aluminum CVD compounds fluidly coupled to the reactor; a treatment reactant source coupled to the reactor; a vacuum pump coupled to the reactor; and a controller configured to perform a reaction chamber treatment using a treatment reactant from the treatment reactant source before or during introduction of the metal CVD precursor to the reaction chamber.