| 摘要 |
PROBLEM TO BE SOLVED: To improve yields of a semiconductor device by letting escape the impact at the time of dicing. SOLUTION: A semiconductor device 100 includes a seal ring 6 formed on an outer circumference of an element forming region 50 when seen from the top in a multilayer interconnect structure 3 formed on a silicon layer 4, and dummy metal structures 30a to 30i formed on a further outer circumference of the seal ring 6. The nearer to the inner circumference side a dummy metal interconnect 24 is formed, the higher layer it is arranged in. COPYRIGHT: (C)2008,JPO&INPIT |
