发明名称 VERY LARGE SCALE INTEGRATION OF FIELD EFFECT TRANSISTORS ON SI NANOWIRES
摘要 An electronic device has a first electrical lead, a nonowire disposed on the first electrical lead, the nanowire having at least one semiconductor section between first and second metallic sections, a second electrical lead constructed to be in electrical contact with the first metallic section of the nanowire, and a third electrical lead in electrical contact with the metallic section of the nanowire. The nanowire has at least a partial oxide outer layer.
申请公布号 WO2007100551(A3) 申请公布日期 2008.07.17
申请号 WO2007US04383 申请日期 2007.02.21
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;TU, KING-NING 发明人 TU, KING-NING
分类号 H01L29/06;B82B1/00;H01L29/775 主分类号 H01L29/06
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