| 摘要 |
A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 mum to 10 mum. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.
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