POWER SEMICONDUCTOR CHIP WITH A METALLIC MOULDED BODY FOR CONTACTING THICK WIRES OR STRIPS AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal moulded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the moulded body used according to the method for contacting are selected corresponding to the magnitude.

主权项

1. A method for fitting moulded bodies on a power semiconductor chip, comprising the steps of:
providing an electrically isolating carrying foil comprising a plurality of moulded bodies; and applying the electrically isolating carrying foil with the plurality of moulded bodies onto potential faces on an upper side of an unsawed wafer assembly; wherein the electrically isolating carrying foil is adapted to resist thermal load when the electrically isolating carrying foil and the plurality of moulded bodies are bonded to the potential faces on the upper side of the unsawed wafer assembly.