HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS

摘要

A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

主权项

1. A wafer chuck assembly, comprising:
a puck comprising: an electrically insulating material defining a top surface of the puck; a heater element embedded within the electrically insulating material; a plurality of electrodes embedded within the electrically insulating material and disposed between the heater element and the top surface; and an electrically conductive plate disposed proximate to the electrically insulating material; a shaft comprising: an electrically conductive shaft housing that is electrically coupled with the plate; and a plurality of connectors, comprising electrical connectors for the heater element and electrical connectors for the electrodes; and a base comprising: an electrically conductive base housing that is electrically coupled with the shaft housing; and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.