| 摘要 |
A semiconductor device includes: a semiconductor layer; a high dielectric constant gate insulation film disposed above the semiconductor layer, the high dielectric constant gate insulation film containing a plurality of elements; a gate electrode disposed on the high dielectric constant gate insulation film; and an impurity region disposed in the semiconductor layer and serving as one of a source region and a drain region, wherein the gate electrode includes a first gate electrode layer made of a material hardly bonded to at least one of the elements included in the high dielectric constant gate insulation film.
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