| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistivity control method capable of controlling resistivity of a silicon single crystal in the axial direction even in an operation where the surface level of raw material melt in a crucible is altered.SOLUTION: A method of controlling resistivity of a silicon single crystal in the axial direction includes a step for calculating a pattern for inserting a rod-like silicon crystal into raw material melt in accordance with a pulling-up length of a silicon single crystal, a step for correcting the pattern for inserting the rod-like silicon crystal into raw material melt in accordance with a pattern for altering the surface level of the raw material melt by an altered amount of the surface level of the raw material melt when raising a trunk of the silicon single crystal, and a step for inserting the rod-like silicon crystal when raising the silicon single crystal, using the corrected pattern for inserting the rod-like silicon crystal into the raw material melt.SELECTED DRAWING: Figure 1 |
