发明名称 LAYER DEPOSITION APPARATUS AND METHOD OF OPERATING LAYER DEPOSITION APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a layer deposition apparatus capable of reducing pre-reaction of a process gas. <P>SOLUTION: The layer deposition apparatus is provided with a chamber (10) having a process gas room (11) which is provided with a substrate carrier (12) for receiving at least one substrate (13) to be coated and a partition wall (23). The partition wall (23) partitions the first segment (21) of the process gas room (11) from the second segment (22) of the process gas room (11), and a device (44) is installed for bringing the substrate (13) into relative motion with respect to the partition wall (23). <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009084693(A) 申请公布日期 2009.04.23
申请号 JP20080250749 申请日期 2008.09.29
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 BEHRES ALEXANDER
分类号 C23C16/458;C23C16/455;H01L21/205 主分类号 C23C16/458
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