| 发明名称 |
FINFET STRUCTURE AND METHOD FOR MANUFACTURING THEREOF |
| 摘要 |
Present disclosure provides a FinFET structure, including a plurality of fins, a gate, and a first dopant layer. The gate is disposed substantially orthogonal over the plurality of fins, covering a portion of a top surface and a portion of sidewalls of the plurality of fins. The first dopant layer covers the top surface and the sidewalls of a junction portion of a first fin, configured to provide dopants of a first conductive type to the junction portion of the first fin. The junction portion is adjacent to the gate. |
| 申请公布号 |
US2016190137(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201414583449 |
申请日期 |
2014.12.26 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
TSAI CHUN HSIUNG;NI CHUN-LUNG;CHEN KEI-WEI |
| 分类号 |
H01L27/092;H01L29/78;H01L29/10;H01L21/324;H01L21/02;H01L21/311;H01L21/8238;H01L29/66;H01L21/225 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A FinFET structure, comprising:
a plurality of fins; a gate, disposed substantially orthogonal over the plurality of fins, covering a portion of a top surface and a portion of sidewalls of the plurality of fins; a first dopant layer, covering the top surface and the sidewalls of a junction portion of a first fin, configured to provide dopants of a first conductive type to the junction portion of the first fin, wherein the junction portion is adjacent to the gate, and a sidewall spacer, covering the first dopant layer over the junction portion. |
| 地址 |
HSINCHU TW |
