METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device comprises forming an interlayer insulating film on a semiconductor substrate, the interlayer insulating film including a trench, forming a work function metal layer in the trench, forming an insulating film on the work function metal layer, forming a sacrificial film on the insulating film and filling the trench, forming a sacrificial film pattern with a top surface disposed in the trench by etching the sacrificial film, forming an insulating film pattern by selectively etching a portion of the insulating film which is formed higher than the sacrificial film pattern, and forming a work function metal pattern with a top surface disposed in the trench by selectively etching a portion of the work function metal layer which is formed higher than the insulating film pattern.

主权项

1. A semiconductor device comprising:
a substrate including a first region and a second region; an inter-layer insulating film disposed on the substrate, and including a first trench on the first region of the substrate and a second trench on the second region of the substrate; a first metal gate structure disposed in the first trench; and a second metal gate structure disposed in the second trench, wherein a top portion of the first metal gate structure is wider than a bottom portion of the first metal gate structure, a top portion of the second metal gate structure is wider than a bottom portion of the second metal gate structure, and the bottom portion of the second metal gate structure is wider than the bottom portion of the first metal gate structure.