THREE-DIMENSIONAL DEVICES HAVING REDUCED CONTACT LENGTH

摘要

Various embodiments comprise apparatuses and methods including a memory array having alternating levels of semiconductor materials and dielectric material with strings of memory cells formed on the alternating levels. One such apparatus includes a memory array formed substantially within a cavity of a substrate. Peripheral circuitry can be formed adjacent to a surface of the substrate and adjacent to the memory array. Additional apparatuses and methods are described.

主权项

1. A method of forming an apparatus, the method comprising:
forming a cavity in a substrate; forming the three-dimensional circuit substantially within the cavity, the cavity having a depth substantially equivalent to a height of the three-dimensional circuit; and forming support circuitry adjacent to the cavity and proximate to a surface of the substrate, an upper surface of the support circuitry being substantially coplanar with an upper surface of the three-dimensional circuit.