SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device.SOLUTION: In a groove TR formed on a semiconductor substrate, a gate electrode GE for a trench gate type field-effect transistor is formed via a gate insulating film GF. An upper surface of the gate electrode GE is located lower than an upper surface of the semiconductor substrate in a region adjacent to the groove TR. A side wall insulating film SW is formed on the gate electrode GE and on a side wall of the groove TR. The gate electrode GE and the side wall insulating film SW are covered with an insulating film IL as an interlayer insulating film.SELECTED DRAWING: Figure 3