发明名称 Alignment Exposure Method and Method of Fabricating Display Substrate
摘要 An alignment exposure method and a method for fabricating a display substrate are disclosed. The alignment exposure method includes a first alignment exposure process and a second alignment exposure process. Multiple groups of alignment marks are provided at an edge of at least one side of the substrate in the first alignment exposure process. At least one group of mark structures are provided at an edge of at least one side of a mask employed in the second alignment exposure process. In multiple mask alignment processes in the second alignment exposure process, each group of the at least one group of the mark structures of the mask are aligned with groups of the alignment marks at a corresponding side of the substrate group by group. The alignment exposure method is employed to realize alignment exposure of a substrate with a size larger than a size of a mask.
申请公布号 US2016334674(A1) 申请公布日期 2016.11.17
申请号 US201615145379 申请日期 2016.05.03
申请人 BOE Technology Group Co., Ltd. ;Hefei BOE Optoelectronics Technology Co., Ltd. 发明人 Yu Xuequan;Wu Bin;Li Kun;Ren Lizhi;Shen Wenjun;Gao Yadong
分类号 G02F1/1337;G03F7/00 主分类号 G02F1/1337
代理机构 代理人
主权项 1. An alignment exposure method, comprising: a first alignment exposure process and a second alignment exposure process, wherein: a plurality of groups of alignment marks is formed at an edge of at least one side of a substrate in the first alignment exposure process; and the second alignment exposure process comprises a plurality of mask alignment processes and a plurality of exposure processes, wherein at least one group of mark structures are provided at an edge of at least one side of a mask employed in the second alignment exposure process, and a distance is provided between two adjacent groups of the alignment marks at a same side of the substrate, with the distance being less than or equal to a width of an effective exposure area at a corresponding side of the mask; and in the plurality of the mask alignment processes, each group of the at least one group of the mark structures of the mask is aligned with groups of the alignment marks at a corresponding side of the substrate one group by one group.
地址 Beijing CN