| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having little variation in gate electrode height in a substrate plane. SOLUTION: A silicide layer 8 is formed on the top of a gate electrode 4 formed on an element forming region on a semiconductor substrate 1, a protective film (silicon nitride film) 9 is formed to cover the entire semiconductor device, and a first interlayer insulation film (silicon oxide film) 10 is formed on the protective film 9. Then, the first interlayer insulation film 10 is etched by the reverse pattern of the gate electrode 4 to alleviate a concentration of recesses and protrusions on the surface of the substrate. Thereafter, the first interlayer insulation film 10 is flattened with the protective film 9 serving as an etch-stop film, the protective film 9 on the gate electrode 4 is removed, and the entire gate electrode 4 is made into a silicide to form a silicide gate electrode. Then, a second interlayer insulation film (silicon oxide film) 11 is formed entirely including the top of the silicide gate electrode. COPYRIGHT: (C)2007,JPO&INPIT
|
