| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same ensuring etching resistance for both hydrofluoric acid and phosphoric acid, and preventing withdrawal of an element isolating and insulating film due to the processes by hydrofluoric acid and phosphoric acid, and to provide a method for forming an oxynitrided silicon film used for the same device and method. SOLUTION: An element isolating groove 10t is formed in an element isolating region of a substrate 10, the element isolating and insulating films (14s, 15s) are embedded and formed in this element isolating groove 10t, and at least an upper part of the element isolating and insulating film is constituted with an oxynitrided silicon film 15s formed to close the element isolating groove 10t. The oxynitrided silicon film is formed by alternately laminating a silicon oxide film and a silicon nitride film filling the element isolating groove of the substrate, applying heat to a laminated material of the silicon oxide film and silicon nitride film, and moving atoms in the direction for attaining uniformity in composition of the laminated material. COPYRIGHT: (C)2007,JPO&INPIT
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