发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device includes an element isolation film having an inclined portion and a flat portion, a protective film formed not on the inclined portion but on the flat portion of the element isolation film, and an outer base layer formed to extend from on a surface of an active region surrounded by the element isolation film to on the protective film.
申请公布号 US2008217654(A1) 申请公布日期 2008.09.11
申请号 US20080073045 申请日期 2008.02.28
申请人 KITAMURA YUUJI;IBARA YOSHIKAZU 发明人 KITAMURA YUUJI;IBARA YOSHIKAZU
分类号 H01L29/737;H01L21/331 主分类号 H01L29/737
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