发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device includes an element isolation film having an inclined portion and a flat portion, a protective film formed not on the inclined portion but on the flat portion of the element isolation film, and an outer base layer formed to extend from on a surface of an active region surrounded by the element isolation film to on the protective film.
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申请公布号 |
US2008217654(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20080073045 |
申请日期 |
2008.02.28 |
申请人 |
KITAMURA YUUJI;IBARA YOSHIKAZU |
发明人 |
KITAMURA YUUJI;IBARA YOSHIKAZU |
分类号 |
H01L29/737;H01L21/331 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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