发明名称 CIRCUIT, BIASING SCHEME AND FABRICATION METHOD FOR DIODE ACCESSED CROSS-POINT RESISTIVE MEMORY ARRAY
摘要 <p>Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.</p>
申请公布号 WO2008157049(A1) 申请公布日期 2008.12.24
申请号 WO2008US65841 申请日期 2008.06.05
申请人 MICRON TECHNOLOGY, INC.;LIU, JUN;PORTER, DAVID 发明人 LIU, JUN;PORTER, DAVID
分类号 G11C16/02;H01L27/24 主分类号 G11C16/02
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