发明名称 |
HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS |
摘要 |
Techniques are disclosed for incorporating high mobility strained channels into fin-based NMOS transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, a germanium or silicon germanium film is cladded onto silicon fins in order to provide a desired tensile strain in the core of the fin, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and cladding deposition can occur at a plurality of locations within typical process flow. In various embodiments, fins may be formed with a minimum width (or later thinned) so as to improve transistor performance. In some embodiments, a thinned fin also increases tensile strain across the core of a cladded fin. In some cases, strain in the core may be further enhanced by adding an embedded silicon epitaxial source and drain. |
申请公布号 |
SG11201606392U(A) |
申请公布日期 |
2016.09.29 |
申请号 |
SG11201606392U |
申请日期 |
2014.03.27 |
申请人 |
INTEL CORPORATION |
发明人 |
CEA, STEPHEN, M.;KOTLYAR, ROZA;KENNEL, HAROLD, W.;GLASS, GLENN, A.;MURTHY, ANAND, S.;RACHMADY, WILLY;GHANI, TAHIR |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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