Composition for resist patterning and method of manufacturing optical structures using imprint lithography

摘要

Provided is a composition for resist patterning comprising a thiol; at least one -ene monomer; at least one polymerization initiator; and, optionally, a metal oxide used in an amount of 0.1 to 50 wt. % per weight of the composition; the thiol and -ene monomer are used in a stoichiometric ratio with a refractive index between 1.6 and 1.8. The composition is used in a patterning process wherein the composition is dispensed to the substrate, is covered with a mask, and is cured, e.g., by UV radiation, at room temperature with light having a wavelength in the range of 200 nm to 450 nm. The process may be carried out with thermal annealing.

主权项

1. A nanoimprint lithography (NIL) ink comprising:
a thiol; an ene monomer; and a polymerization initiator, wherein the NIL ink has a refractive index between 1.6 and 1.95 and a transmittance per micron thickness between 80% and 99%.