发明名称 Electron emitting device with electron acceleration layer containing conductive microparticles
摘要 An electron emitting device includes a lower electrode, a surface electrode, an electron acceleration layer between the lower electrode and the surface electrode, and an electrode selecting unit. The electron acceleration layer is made of at least an insulating material. At least one of the lower electrode and the surface electrode is a stripe-pattern electrode including a plurality of unit electrodes that are regularly arranged. The electrode selecting unit sequentially selects, from among the plurality of unit electrodes, a unit electrode to which a voltage is to be applied. A voltage is applied between the lower electrode and the surface electrode to accelerate electrons between the lower electrode and the surface electrode, so that the electrons are emitted from the surface electrode.
申请公布号 US9307627(B2) 申请公布日期 2016.04.05
申请号 US201414253902 申请日期 2014.04.16
申请人 Sharp Kabushiki Kaisha 发明人 Kaneko Toshihiro;Iwamatsu Tadashi
分类号 H01J1/88;H01J19/42;F03H1/00;H05H5/02;H01J1/312 主分类号 H01J1/88
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. An electron emitting device comprising: a lower electrode; a surface electrode; an electron acceleration layer between the lower electrode and the surface electrode, the electron acceleration layer being made of at least an insulating material; and an electrode selecting unit, wherein at least one of the lower electrode and the surface electrode is a stripe-pattern electrode including a plurality of unit electrodes that are regularly arranged, the electrode selecting unit sequentially selects, from among the plurality of unit electrodes, a unit electrode to which a voltage is to be applied, a voltage is applied between the lower electrode and the surface electrode to accelerate electrons between the lower electrode and the surface electrode, so that the electrons are emitted from the surface electrode, and the electron acceleration layer is made of a resin material containing only conductive microparticles.
地址 Osaka JP