| 摘要 |
An image sensor (10) comprises a PMOS circuit layer (12) comprising an array of pixel elements (122), each pixel element comprising a pinned photodiode, and a Capacitive Trans-Impedance Amplifier (CTIA). The amplifier also comprises P-FET transistors. The image sensor further comprises a CMOS layer (18) comprising supporting pixel circuitry, including a global shutter sample and hold circuit, the supporting pixel circuitry comprising N-FET transistors (181). Each pixel element in the PMOS layer is connected to supporting pixel circuitry in the CMOS layer. |
