| 摘要 |
<p>A plasma jet generator for treatment of a substrate in the manufacturing of semiconductor devices characterized by cathod and anode legs arranged with repect to each other to generate a plasma jet therebetween to treat a substrate. The plasma generator having a magnetic field system disposed around at least the cathode leg wherein the magnetic field system having at least two position controlling magnetic fields which are spaced apart along the plasma jet to precisely control the position and the direction of the plasma jet associated with the cathode leg near the vertex of the plasma jet.</p> |
