PHOTOMASK BLANKS ADDED WITH HIGH DRY ETCHING RESISTANCE POLYMER LAYER AND METHOD OF MANUFACTURING PHOTOMASK USING PHOTOMASK BLANKS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask for inexpensively manufacturing a mask having a mask pattern having high uniformity of in-plane distribution of sizes by being used in a lithography technology of a half pitch of 65 nm and later and possessing excellent size precision of a minute pattern, and to provide a photomask blanks used for it.

SOLUTION: In the photomask blanks comprising a transparent substrate and at least a shading film on one principal plane of the transparent substrate, a non-photosensitive silicon-based polymer layer is coated and formed on the shading film, and dry etching resistance due to chlorine-based gas is large in the silicon-based polymer layer.

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