| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge transfer element which discharges residual signal charges without fail by reducing an ON resistance in resetting, and has resetting property and low noise property at the same time by making a charge transfer element an OFF state without fail in accumulating signal charge, in the charge transfer element (reset transistor) of a charge detecting portion formed by a depression type MOS transistor, and to provide a solid-state image sensor and an imaging device. SOLUTION: The charge transfer element 70 includes a charge injection portion (floating diffusion layer) 78, a reset drain portion 80 and a reset gate portion 90 which resets potential of the charge injection portion 78. A channel depth inhibition layer 92 for limiting depth of a depletion layer 94 is disposed below the reset gate 90 and at a position shallower than a conductive type well layer 72, or while increasing impurity concentration higher than that of the conductive type well layer 72. COPYRIGHT: (C)2009,JPO&INPIT
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