| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and a method of measuring the shape of a wafer with which a chamfered face, a principal face, and a process boundary can be accurately measured.SOLUTION: A wafer includes a principal face that is formed of a wrapping face having random process streaks or a mirror face, and a chamfered face that is formed of a polished face having linear polish streaks in the circumferential direction at the edge on the outer periphery of the wafer. A wafer shape measuring device comprises illumination means that irradiates the wafer with light from a direction parallel to the principal face of the wafer and has an irradiation width of the light larger than the thickness width of the wafer, and imaging means that photographs the wafer from a direction orthogonal to the principal face of the wafer and from above the chamfered face, and measures a process boundary between the chamfered face and the principal face from an image of a banded bright part photographed by the imaging means and showing the chamfered face.SELECTED DRAWING: Figure 6 |
