发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To achieve improvement in image quality and in auto-focus speed, in a solid-state imaging element that has two photodiodes arranged in a predetermined direction in each pixel and that is formed by performing division exposure in which the whole chip is processed by a plurality of times of exposure.SOLUTION: A first exposure region IG1 having a first region 1A and a second exposure region IG2 having a second region 2A are overlapped in a third region 3A provided between the first region 1A and the second region 2A. In a pixel PE3 formed in the third region 3A, a photodiode PD2 formed by a mask for the first exposure region IG1 is arranged at a position closer to the second region 2A side, compared with a photodiode PD3 formed by a mask for the second exposure region IG2.SELECTED DRAWING: Figure 2
申请公布号 JP2016187028(A) 申请公布日期 2016.10.27
申请号 JP20150067714 申请日期 2015.03.27
申请人 RENESAS ELECTRONICS CORP 发明人 KIMURA MASATOSHI
分类号 H01L27/146;G03F1/70;G03F7/20 主分类号 H01L27/146
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