| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in heat radiation performance and withstand-voltage performance and a power module having the semiconductor device.SOLUTION: The semiconductor device includes: a first metallic member, an insulation sheet, a second metallic member provided in at least a part of the insulation sheet; and a semiconductor element in this order. Furthermore, the semiconductor device includes: a conductor layer provided on the surface of the insulation sheet at a side where the second metallic member is provided; and sealing resin for sealing at least the insulation sheet, the second metallic member, the semiconductor element and the conductor layer. The conductor layer includes: at least a part extended from a point where a line formed by extending an outer peripheral edge of the second metallic member in a lamination direction crosses the surface of the insulation sheet to the outer peripheral edge direction of the insulation sheet. The conductor layer has an outer peripheral edge inside the outer peripheral edge of the insulation sheet.SELECTED DRAWING: Figure 1 |
