| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved process for making a structure having an embedded dielectric layer of uniform thickness.MEANS FOR SOLVING THE PROBLEM: A process for making a final structure (5) including a useful semiconductor layer (3'), a dielectric layer (2), and a carrier substrate (4) continuously includes a step of providing an intermediate structure (1) including an upper semiconductor layer (3), the dielectric layer (2), and the carrier substrate (4), and a step of finishing the intermediate structure (1) for forming the final structure (5), and including a processing for changing the thickness of the dielectric layer (2) according to a melting profile determined. In the process, the dielectric layer (2) of the intermediate structure (1) has a thickness profile complementary to the melting profile thus determined.SELECTED DRAWING: Figure 2a |
