| 摘要 |
Described are a sensor assembly (100) for sensing an infrared ray and a manufacturing method thereof. The sensor includes at least one sensing device (150) provided on or embedded in a substrate (160) which is extended from the plane of the substrate and a cap for covering at least one sensing device (150). The cap (110) includes a top wall for receiving radiation incident on the sensor assembly and a plurality of cavity walls (130) to form a cavity (120) between the cap and the substrate for hosting the sensing device (150). At least one cavity wall (130) subtends an angle with regard to the receiving top wall to induce total internal reflection on the cavity wall for the incident radiation. |
