发明名称 |
Method of production of charge-trapping memory devices |
摘要 |
The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing circuitry to implant doped source/drain regions. The oxynitride reduces the stress between the nitride and the semiconductor material and prevents charge carriers from penetrating out of a memory layer of nitride into the liner.
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申请公布号 |
US2006223267(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20050095925 |
申请日期 |
2005.03.31 |
申请人 |
MACHILL STEFAN;LUDWIG CHRISTOPH;SCHLEY JAN-MALTE;WEIN GUNTHER;SACHSE JENS-UWE;KRAUSE MATHIAS;ISLER MARK;DEPPE JOACHIM |
发明人 |
MACHILL STEFAN;LUDWIG CHRISTOPH;SCHLEY JAN-MALTE;WEIN GUNTHER;SACHSE JENS-UWE;KRAUSE MATHIAS;ISLER MARK;DEPPE JOACHIM |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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