| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-reliability power semiconductor module, without the generation of nonconformities, such as cracks and liftings with respect to thermal shock cycles nor troubles, such as displacement in the production process. SOLUTION: A power semiconductor module comprises a power semiconductor element, an insulating substrate, and a heat sink. At least either the gap between the power semiconductor element and the insulating substrate or the gap between the insulating substrate and the heat sink is joined by a lamination structure with a Cu layer, a Cu<SB>3</SB>S<SB>n</SB>layer, and a Cu layer laminated in this order, and a production method therefor are provided. COPYRIGHT: (C)2008,JPO&INPIT |
