Verfahren zur Züchtung eines Einkristalls von Siliziumcarbid

摘要

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so as to grow a silicon carbide single crystal (3) on the seed crystal, the temperature gradient from the back surface of the seed crystal (2) toward the crucible cap (8) side is rendered zero or a positive value, whereby the back surface sublimation from the back surface of the seed crystal (2) is prevented or suppressed. Furthermore, by allowing the inner wall of the growth vessel in the periphery of the seed crystal to have a temperature higher than the temperature on the surface of the seed crystal (2), a polycrystal silicon carbide is prevented or suppressed from growing and thereby inhibiting the growth of a silicon carbide single crystal (3).